inchange semiconductor isc product specification isc website www.iscsemi.cn isc triacs TIC246N features with to-220 package sensitive gate triacs glass passivated max i gt of 50 ma (quadrants 1~3) absolute maximum ratings(ta=25 ) symbol parameter min unit v drm repetitive peak off-state voltage 800 v v rrm repetitive peak reverse voltage 800 v i t(rms) rms on-state current (full sine wave)t c =70 16 a i tsm non-repetitive peak on-state current 125 a t j operating junction temperature 110 t stg storage temperature -45~125 r th(j-c) thermal resistance, junction to case 1.9 /w r th(j-a) thermal resistance, junction to ambient 62.5 /w electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions typ. max unit i drm repetitive peak off-state current v d =v drm , t c =110 2.0 ma i gt gate trigger current v supply = 12 v?; r l = 10 ; t p(g) > 20 s 12 50 ma 19 50 16 50 34 i h holding current v supply = 12 v? ,i g = 0 initial i tm =100ma 40 ma v gt gate trigger voltage all quadrant v supply = 12 v?; r l = 10 ; t p(g) > 20 s 2 v v tm on-state voltage i t = 22.5a; i g = 50ma 1.7 v
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